STW33N60M2 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STW33N60M2
Manufacturer

ST Microelectronics
ChipWorker Part#

CW9738261
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247 N-CH 650V 26A
Documentation

Datasheet

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STW33N60M2 Specifications

Attribute	Attribute Value

Part Number	STW33N60M2
Manufacturer	ST Microelectronics
ChipWorker Part#	CW9738261
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.108 Ω
Polarity	N-CH
Power Dissipation	190 W
Threshold Voltage	3 V
Input Capacitance	1781 pF
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	26A
Rise Time	9.6 ns
Input Capacitance (Ciss)	1781pF @100V(Vds)
Input Power (Max)	190 W
Fall Time	9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	190W (Tc)
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

In addition to amplifying electronic signals, you"ll be able to switch between various lines with the STW33N60M2 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 190000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh ii technology.

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