STW34NM60N - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STW34NM60N
Manufacturer

ST Microelectronics
ChipWorker Part#

CW11313933
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247 N-CH 600V 29A
Documentation

Datasheet

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STW34NM60N Specifications

Attribute	Attribute Value

Part Number	STW34NM60N
Manufacturer	ST Microelectronics
ChipWorker Part#	CW11313933
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.092 Ω
Polarity	N-Channel
Power Dissipation	210 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	29A
Rise Time	34 ns
Input Capacitance (Ciss)	2722pF @100V(Vds)
Input Power (Max)	210 W
Fall Time	70 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250W (Tc)
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

The STW34NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
100% Avalanche tested
Low gate input resistance

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