STW45NM50 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STW45NM50
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8309100
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247 N-CH 500V 45A
Documentation

Datasheet

STW45NM50 Global Supplier

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STW45NM50 Specifications

Attribute	Attribute Value

Part Number	STW45NM50
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8309100
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	500 V
Current Rating	45.0 A
Power Rating	390 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.1 Ω
Polarity	N-Channel
Power Dissipation	417 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	500 V
Continuous Drain Current (Ids)	45.0 A
Rise Time	107.5 ns
Input Capacitance (Ciss)	3700pF @25V(Vds)
Input Power (Max)	417 W
Fall Time	87.7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	417W (Tc)
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The STW45NM50 is a 550V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, MOSFET boasts an overall dynamic performance which is superior. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
100% Avalanche tested
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
Low gate input resistance

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