STY60NM50 ,MOSFET, MOSFET Transistor - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

110 points

Part No

STY60NM50
Manufacturer

ST Microelectronics
ChipWorker Part#

CW12610920
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

STMICROELECTRONICS STY60NM50 MOSFET Transistor, N Channel, 60A, 500V, 50mohm, 10V, 4V
Documentation

Datasheet
Ships from

Moscow
Наличие

94263 pcs In Stock
Estimated Price

$ 0.26

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STY60NM50 Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	STY60NM50
Manufacturer	ST Microelectronics
ChipWorker Part#	CW12610920
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	500 V
Current Rating	60.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.05 Ω
Polarity	N-Channel
Power Dissipation	560 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	60.0 A
Rise Time	58 ns
Input Capacitance (Ciss)	7500pF @25V(Vds)
Input Power (Max)	560 W
Fall Time	46 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	560W (Tc)
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Size-Width	5.3 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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Product Description

The STY60NM50 is a MDmesh™ N-channel Zener-protected Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The proprietary strip technique yields overall dynamic performance that is significantly better. It is suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
0.045R RDS (ON)
High dV/dt and avalanche capability
Improved ESD capability
Low input capacitance and gate charge
Low gate input resistance
Tight process control
Lowest ON-resistance

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