TIP147G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP147G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW2331300
Category

BJT Transistor, BJT
Package

TO-247-3
Description

TO-247 PNP 100V 10A
Documentation

Datasheet

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TIP147G Specifications

Attribute	Attribute Value

Part Number	TIP147G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW2331300
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	-100 V
Current Rating	-10.0 A
Output Voltage	100 V
Output Current	10 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	125 W
Breakdown Voltage (Collector to Emitter)	100 V
Thermal Resistance	35.7℃/W (RθJA)
Continuous Collector Current	10A
hFE Min	1000 @5A, 4V
Input Power (Max)	125 W
DC Current Gain (hFE)	500
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	125000 mW
Input Voltage	5 V
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Size-Length	16.26 mm
Size-Width	16.26 mm
Size-Height	5.3 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

**PNP Darlington Transistors, ON Semiconductor**
These Darlington transistors by ON Semiconductor are a compound structure consisting of two bipolar transistors, either integrated or separated devices. These devices are connected so the current amplified by the first transistor is further amplified by the second device.

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