TIP32AG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP32AG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW2466304
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 60V 3A
Documentation

Datasheet

TIP32AG Global Supplier

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TIP32AG Specifications

Attribute	Attribute Value

Part Number	TIP32AG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW2466304
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	3 MHz
Voltage Rating (DC)	-60.0 V
Current Rating	3.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	40 W
Gain Bandwidth Product	3 MHz
Breakdown Voltage (Collector to Emitter)	60 V
Thermal Resistance	3.125℃/W (RθJC)
Continuous Collector Current	3A
hFE Min	10 @3A, 4V
Input Power (Max)	2 W
DC Current Gain (hFE)	50
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	10.28 mm
Size-Width	4.83 mm
Size-Height	15.75 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Look no further than ON Semiconductor"s PNP TIP32AG general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

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