TIP35C ,BJT Transistor, BJT - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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254 points

Part No

TIP35C
Manufacturer

ST Microelectronics
ChipWorker Part#

CW183286
Category

BJT Transistor, BJT
Package

TO-247-3
Description

Trans GP BJT NPN 100V 25A 125000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.4

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TIP35C Specifications

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Attribute	Attribute Value

Part Number	TIP35C
Manufacturer	ST Microelectronics
ChipWorker Part#	CW183286
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Frequency	3 MHz
Voltage Rating (DC)	100 V
Current Rating	25.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	125 W
Breakdown Voltage (Collector to Base)	100 V
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	10 @15A, 4V
Input Power (Max)	125 W
DC Current Gain (hFE)	50
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	125000 mW
	expand all
Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16
ECCN Code	EAR99

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Product Description

The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with "base island" layout resulting in exceptional high gain performance coupled with very low saturation voltage and suitable for general purpose linear and switching applications.
Collector to emitter voltage (Vce) is 100V
Collector current (Ic) is 25A
Power dissipation (Pd) is 125W
Collector to emitter saturation voltage of 4V at 25A collector current
DC current gain (hFE) of 10 at 15A collector current
Operating junction temperature range from 150°C

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