TIR1000PSR ,Interface IC, Interface Controller - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

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134 points

Part No

TIR1000PSR
Manufacturer

TI
ChipWorker Part#

CW23764688
Category

Interface IC, Interface Controller
Package

SOIC-8
Description

Specialized Interface, UART, IrDA Standard Protocol, 2.7V, 6V, SOIC, 8Pins
Documentation

Datasheet
Ships from

Moscow
Наличие

494327 pcs In Stock
Estimated Price

$ 0.01

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TIR1000PSR Specifications

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Attribute	Attribute Value

Part Number	TIR1000PSR
Manufacturer	TI
ChipWorker Part#	CW23764688
Category	Interface IC, Interface Controller
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	2.70V (min)
Number of Outputs	2 Output
Supply Current	1.00 mA
Number of Circuits	1 Circuit
Number of Channels	1 Channel
Number of Positions	8 Position
Number of Bits	1 Bit
Peak Wavelength	900 nm
Data Rate	115 kbps
Operating Temperature (Max)	70 ℃
Operating Temperature (Min)	0 ℃
Supply Voltage (Max)	5.5 V
Supply Voltage (Min)	2.7 V
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Size-Length	6.5 mm
Size-Width	5.6 mm
Size-Height	1.85 mm
Operating Temperature	0℃ ~ 70℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

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Product Description

The TIR1000PSR is a serial infrared (SIR) CMOS Encoder And Decoder that encodes and decodes bit data in conformance with the IrDA specification. A transceiver device is needed to interface to the photo-sensitive diode (PIN) and the light emitting diode (LED). UART is needed to interface to the serial data lines.
Adds infrared (IR) port to universal asynchronous receiver transmitter (UART)
Compatible with infrared data association (IrDA™) and Hewlett Packard serial infrared (HPSIR)
Provides 1200bps to 115kbps data rate
Provides simple interface with UART
Decodes negative or positive pulses
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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