TS12A12511DGKR - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TS12A12511DGKR
Manufacturer

TI
ChipWorker Part#

CW10157000
Category

Analog Switch Ic, Analog Switch Multiplexer
Package

VSSOP-8
Description

TEXAS INSTRUMENTS TS12A12511DGKR Analogue Switch, Single Channel, SPDT, 1Channels, 8Ω, 2.7V to 12V, ± 2.7V to ± 6V, VSSOP
Documentation

Datasheet

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TS12A12511DGKR Specifications

Attribute	Attribute Value

Part Number	TS12A12511DGKR
Manufacturer	TI
ChipWorker Part#	CW10157000
Category	Analog Switch Ic, Analog Switch Multiplexer
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	VSSOP-8
Supply Voltage (DC)	2.70V ~ 12.0V
Number of Outputs	2 Output
Supply Current	70 nA
Number of Circuits	1 Circuit
Number of Channels	1 Channel
Number of Positions	8 Position
Bandwidth	93.0 MHz
Number of Inputs	1 Input
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
3dB Bandwidth	93 MHz
Supply Voltage (Max)	12 V
Supply Voltage (Min)	2.7 V
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Size-Length	3.1 mm
Size-Width	3.1 mm
Size-Height	0.95 mm
Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/06/15

Product Description

The TS12A12511DGKR is a single-pole double-throw (SPDT) single-channel Analog Switch with negative signaling capability. It can pass signals with swings of 0 to 12 or -6 to 6V. This switch conducts equally well in both directions when it is on. The device also offers a low on-state resistance of 5R (typical), which is matched to within 1R between channels. The maximum current consumption is <1µA and -3 dB bandwidth is >93MHz. The TS12A12511 exhibits break-before-make switching action, preventing momentary shorting when switching channels.
Rail-to-rail analog signal handling
Fast TON and TOFF times
Latch-up performance exceeds 100mA Per JESD 78, Class II
ESD performance tested per JESD 22
Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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