ULN2003ADR2G ,BJT Transistor, BJT - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

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279 points

Part No

ULN2003ADR2G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW94887
Category

BJT Transistor, BJT
Package

SOIC-16
Description

SOIC NPN 0.5A
Documentation

Datasheet
Ships from

Moscow
Наличие

153 pcs In Stock
Estimated Price

$ 0.1

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ULN2003ADR2G Specifications

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Attribute	Attribute Value

Part Number	ULN2003ADR2G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW94887
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	SOIC-16
Halogen Free Status	Halogen Free
Number of Outputs	7 Output
Output Voltage	50 V
Output Current	500 mA
Number of Channels	7 Channel
Number of Positions	16 Position
Polarity	NPN
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	0.5A
hFE Min	1000 @350mA, 2V
hFE Max	1000
Output Current (Max)	500 mA
DC Current Gain (hFE)	1000
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-20 ℃
Input Voltage	30 V
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Size-Width	4 mm
Operating Temperature	-20℃ ~ 85℃ (TA)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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Product Description

The ULN2003ADR2G is a 50V Darlington Transistor Driver Array for driving relays or incandescent lamps. The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500mA permit them to drive incandescent lamps. The ULN2003A with a 2.7kR series input resistor is well suited for systems utilizing a 5V TTL or CMOS Logic.
Peak inrush currents to 500mA
High breakdown voltage
Internal suppression diodes
30V Input voltage
25mA Continuous base current
20°C/W Thermal resistance, junction to case
100°C/W Thermal resistance, junction to ambient
Electrostatic discharge sensitivity (ESD)
ESD sensitive device, take proper precaution while handling the device.

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