ULN2804A - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ULN2804A
Manufacturer

ST Microelectronics
ChipWorker Part#

CW161446
Category

BJT Transistor, BJT
Package

DIP-18
Description

Trans Darlington NPN 50V 0.5A 2250mW 18Pin PDIP Tube
Documentation

Datasheet

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ULN2804A Specifications

Attribute	Attribute Value

Part Number	ULN2804A
Manufacturer	ST Microelectronics
ChipWorker Part#	CW161446
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	18 Pin
Case/Package	DIP-18
Voltage Rating (DC)	50.0 V
Current Rating	500 mA
Output Voltage	50 V
Output Current	500 mA
Number of Channels	8 Channel
Number of Positions	18 Position
Polarity	NPN
Power Dissipation	2.25 W
Input Capacitance	15.0 pF
Breakdown Voltage (Collector to Emitter)	50 V
hFE Min	1000 @350mA, 2V
Input Power (Max)	2.25 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-20 ℃
Power Dissipation (Max)	2250 mW
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Size-Length	23.24 mm
Size-Width	7.1 mm
Size-Height	3.93 mm
Operating Temperature	-20℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The ULN2804A from STMicroelectronics is a through hole eight darlington array in DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features peak load current rating of 600mA (500mA continuous) and can withstand at least 50V in the OFF state, 10.5Kohm input resistor for 6V to 15V CMOS are available to simplify interfacing to standard logic families.
Inputs pinned opposite to outputs to simplify board layout
Outputs may be paralleled for higher current capability
Integral suppression diodes
Output voltage of 50V
DC current gain (hFE) of 1000
Operating ambient temperature range from -20°C to 85°C
Power dissipation (Pd) is 2.25W

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