ZTX1053A - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX1053A
Manufacturer

Diodes
ChipWorker Part#

CW24074433
Category

BJT Transistor, BJT
Package

TO-92-3
Description

Trans GP BJT NPN 75V 3A 1000mW Automotive 3Pin E-Line
Documentation

Datasheet

ZTX1053A Global Supplier

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ZTX1053A Specifications

Attribute	Attribute Value

Part Number	ZTX1053A
Manufacturer	Diodes
ChipWorker Part#	CW24074433
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	140 MHz
Voltage Rating (DC)	74.0 V
Current Rating	3.00 A
Power Rating	1 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	75 V
Continuous Collector Current	3A
hFE Min	300 @1A, 2V
Input Power (Max)	1 W
DC Current Gain (hFE)	450
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1000 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Add switching and amplifying capabilities to your electronic circuit with this NPN ZTX1053A GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 75 V and a maximum emitter base voltage of 5 V.

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