ZTX549 - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX549
Manufacturer

Diodes
ChipWorker Part#

CW47400732
Category

BJT Transistor, BJT
Package

TO-92-3
Description

Trans GP BJT PNP 30V 1A 1000mW Automotive 3Pin TO-92
Documentation

Datasheet

ZTX549 Global Supplier

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ZTX549 Specifications

Attribute	Attribute Value

Part Number	ZTX549
Manufacturer	Diodes
ChipWorker Part#	CW47400732
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	100 MHz
Voltage Rating (DC)	-25.0 V
Current Rating	-1.00 A
Polarity	PNP
Power Dissipation	1 W
Gain Bandwidth Product	100 MHz
Breakdown Voltage (Collector to Emitter)	30 V
Continuous Collector Current	1A
hFE Min	100 @500mA, 2V
Input Power (Max)	1 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	4.95 mm
Size-Width	2.41 mm
Size-Height	4.95 mm
Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

Implement this versatile PNP ZTX549 GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

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