ZTX849 - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX849
Manufacturer

Diodes
ChipWorker Part#

CW46535018
Category

BJT Transistor, BJT
Package

E-Line-3
Description

Trans GP BJT NPN 30V 5A 3Pin E-Line
Documentation

Datasheet

ZTX849 Global Supplier

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ZTX849 Specifications

Attribute	Attribute Value

Part Number	ZTX849
Manufacturer	Diodes
ChipWorker Part#	CW46535018
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	E-Line-3
Voltage Rating (DC)	30.0 V
Current Rating	5.00 A
Polarity	NPN
Power Dissipation	1.2 W
Breakdown Voltage (Collector to Emitter)	30 V
Continuous Collector Current	5A
hFE Min	100 @1A, 1V
Input Power (Max)	1.2 W
DC Current Gain (hFE)	200
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1200 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Bipolar (BJT) Transistor NPN 30V 5A 100MHz 1.2W Through Hole E-Line (TO-92 compatible)

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Ordering Information

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- Please check the technical specifications of the products when ordering.
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- Carefully tested and packaged by ChipWorker
- Vacuum packed
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- Anti-vibration foam
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- Surface testing

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