ZTX869 - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX869
Manufacturer

Diodes
ChipWorker Part#

CW56572553
Category

BJT Transistor, BJT
Package

TO-92-3
Description

ZTX869 Series 25V 5A 1.2W NPN Medium Power Transistor - E-Line (TO-92)
Documentation

Datasheet

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ZTX869 Specifications

Attribute	Attribute Value

Part Number	ZTX869
Manufacturer	Diodes
ChipWorker Part#	CW56572553
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	100 MHz
Voltage Rating (DC)	25.0 V
Current Rating	5.00 A
Polarity	NPN
Power Dissipation	1.2 W
Breakdown Voltage (Collector to Emitter)	25 V
Continuous Collector Current	5A
hFE Min	300 @1A, 1V
hFE Max	300 @10mA, 1V
Input Power (Max)	1.2 W
DC Current Gain (hFE)	450
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1200 mW
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Size-Length	4.77 mm
Size-Width	2.41 mm
Size-Height	4.01 mm
Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Do you require a transistor in your circuit operating in the high-voltage range? This NPN ZTX869 general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 6 V.

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