ZXTN620MATA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZXTN620MATA
Manufacturer

Diodes
ChipWorker Part#

CW10988548
Category

BJT Transistor, BJT
Package

DFN-3
Description

Trans GP BJT NPN 80V 3.8A 2450mW Automotive 3Pin DFN EP T/R
Documentation

Datasheet

ZXTN620MATA Global Supplier

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ZXTN620MATA Specifications

Attribute	Attribute Value

Part Number	ZXTN620MATA
Manufacturer	Diodes
ChipWorker Part#	CW10988548
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	DFN-3
Frequency	160 MHz
Polarity	NPN
Power Dissipation	2.45 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	3.8A
hFE Min	300 @200mA, 2V
Input Power (Max)	3 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2450 mW
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Size-Height	0.58 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

Use this versatile NPN ZXTN620MATA GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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