ZXTN620MATA ,BJT Transistor, BJT - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

82 points

Part No

ZXTN620MATA
Manufacturer

Diodes
ChipWorker Part#

CW10988548
Category

BJT Transistor, BJT
Package

DFN-3
Description

Trans GP BJT NPN 80V 3.8A 2450mW Automotive 3Pin DFN EP T/R
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.12

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ZXTN620MATA Specifications

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Attribute	Attribute Value

Part Number	ZXTN620MATA
Manufacturer	Diodes
ChipWorker Part#	CW10988548
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	DFN-3
Frequency	160 MHz
Polarity	NPN
Power Dissipation	2.45 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	3.8A
hFE Min	300 @200mA, 2V
Input Power (Max)	3 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2450 mW
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Size-Height	0.58 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

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Product Description

Use this versatile NPN ZXTN620MATA GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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- Please check the technical specifications of the products when ordering.
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