1N5809US - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

1N5809US
Manufacturer

Microsemi
ChipWorker Part#

CW15758917
Category

TVS Diode
Package

E-MELF
Description

Diode Switching 100V 6A 2Pin E-MELF
Documentation

Datasheet

1N5809US Global Supplier

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1N5809US Specifications

Attribute	Attribute Value

Part Number	1N5809US
Manufacturer	Microsemi
ChipWorker Part#	CW15758917
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	2 Pin
Case/Package	E-MELF
Forward Voltage	0.875 V
Thermal Resistance	52 ℃/W
Reverse recovery time	30 ns
Forward Current	6000 mA
Maximum Forward Voltage (Max)	875mV @4A
Forward Current (Max)	6000 mA
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
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Size-Length	5.72 mm
Size-Width	3.76 mm
Size-Height	3.76 mm
Product Lifecycle Status	Active
Packaging	Bag
RoHS	Non-Compliant
Lead-Free Status	Contains Lead

Product Description

This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal _“Category 1”_ metallurgical bond. These devices are available in both leaded and surface mount MELF package configurations. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

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