MMBTA06LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBTA06LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW21259
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 80V 0.5A
Documentation

Datasheet

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MMBTA06LT1G Specifications

Attribute	Attribute Value

Part Number	MMBTA06LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW21259
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	100 MHz
Voltage Rating (DC)	80.0 V
Current Rating	500 mA
Power Rating	225 mW
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	225 mW
Gain Bandwidth Product	100 MHz
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	0.5A
hFE Min	100 @100mA, 1V
Input Power (Max)	225 mW
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	0.94 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

The MMBTA06LT1G is a 80V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
Halogen-free/BFR-free
80VDC Collector to base voltage (VCBO)
4VDC Emitter to base voltage (VEBO)
556°C/W Thermal resistance, junction to ambient

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