2N2222A ,BJT Transistor, BJT - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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186 points

Part No

2N2222A
Manufacturer

ST Microelectronics
ChipWorker Part#

CW40453589
Category

BJT Transistor, BJT
Package

TO-18-3
Description

Bipolar (BJT) Single Transistor, NPN, 40V, 300MHz, 0.5W(1/2W), 600mA, 300 hFE
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 2.26

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2N2222A Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	2N2222A
Manufacturer	ST Microelectronics
ChipWorker Part#	CW40453589
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-18-3
Frequency	250 MHz
Voltage Rating (DC)	75.0 V
Current Rating	600 mA
Power Rating	500 mW
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	500 mW
Breakdown Voltage (Collector to Base)	75.0 V
Breakdown Voltage (Collector to Emitter)	40 V
hFE Min	100 @150mA, 10V
hFE Max	300
Input Power (Max)	500 mW
DC Current Gain (hFE)	300
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
	expand all
Size-Length	5.8 mm
Size-Width	5.8 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99
HK STC License	NLR

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Product Description

The 2N2222A from STMicroelectronics is a through hole NPN silicon planar epitaxial transistor in TO-18 package. This transistor designed as high speed switch which features low leakage currents, low saturation voltage and useful current gain over a wide range of collector current. Typically suitable for high speed switching application.
Collector to emitter voltage (Vce) is 40V
Collector current (Ic) is 0.6A
Power dissipation (Pd) is 1.8W
Collector to emitter saturation voltage of 1V at 500mA collector current
DC current gain (hFE) of 35 at 0.1mA collector current
Operating junction temperature range from 175°C

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