2N3439 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N3439
Manufacturer

ST Microelectronics
ChipWorker Part#

CW40160704
Category

BJT Transistor, BJT
Package

TO-39
Description

Trans GP BJT NPN 350V 1A 10000mW 3Pin TO-39 Bag
Documentation

Datasheet

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2N3439 Specifications

Attribute	Attribute Value

Part Number	2N3439
Manufacturer	ST Microelectronics
ChipWorker Part#	CW40160704
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-39
Frequency	15 MHz
Voltage Rating (DC)	450 V
Current Rating	1.00 A
Power Rating	1 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1 W
Breakdown Voltage (Collector to Base)	450 V
Breakdown Voltage (Collector to Emitter)	350 V
hFE Min	40 @20mA, 10V
Input Power (Max)	1 W
DC Current Gain (hFE)	40
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	10000 mW
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Material	Silicon
Operating Temperature	200℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Bag
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

Bipolar (BJT) Transistor NPN 350 V 1 A 15MHz 1 W Through Hole TO-39

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