2N3716 ,BJT Transistor, BJT - Central Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

51 points

Part No

2N3716
Manufacturer

Central Semiconductor
ChipWorker Part#

CW149522875
Category

BJT Transistor, BJT
Package

TO-3
Description

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1Element, NPN, Silicon, TO-3, Metal, 2Pin, TO-3, 2Pin
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 4.15

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2N3716 Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	2N3716
Manufacturer	Central Semiconductor
ChipWorker Part#	CW149522875
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3
Frequency	4 MHz
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	50 @1A, 2V
Input Power (Max)	150 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	150000 mW
	expand all
Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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Product Description

Use this versatile NPN 2N3716 GP BJT from Central Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

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