2N3716 - Central Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N3716
Manufacturer

Central Semiconductor
ChipWorker Part#

CW149522875
Category

BJT Transistor, BJT
Package

TO-3
Description

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1Element, NPN, Silicon, TO-3, Metal, 2Pin, TO-3, 2Pin
Documentation

Datasheet

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2N3716 Specifications

Attribute	Attribute Value

Part Number	2N3716
Manufacturer	Central Semiconductor
ChipWorker Part#	CW149522875
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3
Frequency	4 MHz
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	50 @1A, 2V
Input Power (Max)	150 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	150000 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Use this versatile NPN 2N3716 GP BJT from Central Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

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