2N4918 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N4918
Manufacturer

ON Semiconductor
ChipWorker Part#

CW135430096
Category

BJT Transistor, BJT
Package

TO-225-3
Description

TO-225-3 PNP 40V 1A
Documentation

Datasheet

2N4918 Global Supplier

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2N4918 Specifications

Attribute	Attribute Value

Part Number	2N4918
Manufacturer	ON Semiconductor
ChipWorker Part#	CW135430096
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-225-3
Voltage Rating (DC)	-40.0 V
Current Rating	1.00 A
Polarity	PNP
Power Dissipation	30 W
Gain Bandwidth Product	3 MHz
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	1A
hFE Min	30 @500mA, 1V
hFE Max	150
Input Power (Max)	30 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	30000 mW
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Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Bulk
Minimum Packing Quantity	500
RoHS	Non-Compliant
Lead-Free Status	Contains Lead

Product Description

The Power 3 A, 80 V Bipolar PNP Transistor is designed for driver circuits, switching and amplifier applications.
Features
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Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation - PD = 30 W @ TC = 25°C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to NPN 2N4921, 2N4922, 2N4923
Pb-Free Package is Available

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