2N5401G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N5401G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW66938175
Category

BJT Transistor, BJT
Package

TO-226-3
Description

TO-92 PNP 150V 0.6A
Documentation

Datasheet

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2N5401G Specifications

Attribute	Attribute Value

Part Number	2N5401G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW66938175
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-226-3
Frequency	100 MHz
Voltage Rating (DC)	-150 V
Current Rating	-600 mA
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	625 mW
Breakdown Voltage (Collector to Emitter)	150 V
Thermal Resistance	83.3℃/W (RθJC)
Continuous Collector Current	0.6A
hFE Min	60 @10mA, 5V
Input Power (Max)	625 mW
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625 mW
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Size-Length	5.2 mm
Size-Width	4.19 mm
Size-Height	5.33 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Box
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The 2N5401G is a PNP silicon amplifier Bipolar Transistor, 150VDC collector-emitter voltage, 160VDC collector-base voltage and 600mADC collector current-continuous. Designed for medium power applications.
200°C/W Junction-to-ambient thermal resistance
83.3°C/W Junction-to-case thermal resistance

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