2N5415 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N5415
Manufacturer

ST Microelectronics
ChipWorker Part#

CW63448966
Category

BJT Transistor, BJT
Package

TO-39-3
Description

Trans GP BJT PNP 200V 1A 3Pin TO-39 Bag
Documentation

Datasheet

2N5415 Global Supplier

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2N5415 Specifications

Attribute	Attribute Value

Part Number	2N5415
Manufacturer	ST Microelectronics
ChipWorker Part#	CW63448966
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-39-3
Frequency	15 MHz
Voltage Rating (DC)	-200 V
Current Rating	-1.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	1 W
Gain Bandwidth Product	15 MHz
Breakdown Voltage (Collector to Emitter)	200 V
hFE Min	30 @50mA, 10V
hFE Max	150
Input Power (Max)	1 W
DC Current Gain (hFE)	30
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	9.4 mm
Size-Width	9.4 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	-65℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

Bipolar (BJT) Transistor PNP 200 V 1 A 15MHz 1 W Through Hole TO-39

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