2N6040G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6040G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8971872
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 60V 8A
Documentation

Datasheet

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2N6040G Specifications

Attribute	Attribute Value

Part Number	2N6040G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8971872
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-60.0 V
Current Rating	8.00 A
Output Voltage	60 V
Output Current	8 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	75 W
Breakdown Voltage (Collector to Emitter)	60 V
Thermal Resistance	57℃/W (RθJA)
Continuous Collector Current	8A
hFE Min	1000 @4A, 4V
hFE Max	20000
Input Power (Max)	75 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	75 W
Input Voltage	2.8 V
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Size-Length	15.75 mm
Size-Width	4.83 mm
Size-Height	4.82 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

**PNP Darlington Transistors, ON Semiconductor**
These Darlington transistors by ON Semiconductor are a compound structure consisting of two bipolar transistors, either integrated or separated devices. These devices are connected so the current amplified by the first transistor is further amplified by the second device.

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