2N6052G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6052G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW9205633
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-3 PNP 100V 12A
Documentation

Datasheet

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2N6052G Specifications

Attribute	Attribute Value

Part Number	2N6052G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW9205633
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Voltage Rating (DC)	-100 V
Current Rating	-12.0 A
Output Voltage	100 V
Output Current	12 A
Number of Positions	2 Position
Polarity	PNP, P-Channel
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	12A
hFE Min	750 @6A, 3V
hFE Max	18000
Input Power (Max)	150 W
DC Current Gain (hFE)	100
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	150 W
Input Voltage	5 V
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Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

**PNP Darlington Transistors, ON Semiconductor**
These Darlington transistors by ON Semiconductor are a compound structure consisting of two bipolar transistors, either integrated or separated devices. These devices are connected so the current amplified by the first transistor is further amplified by the second device.

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