IRF3205PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF3205PBF
Manufacturer

Infineon
ChipWorker Part#

CW35285
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 55V 110A
Documentation

Datasheet

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IRF3205PBF Specifications

Attribute	Attribute Value

Part Number	IRF3205PBF
Manufacturer	Infineon
ChipWorker Part#	CW35285
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	150 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.008 Ω
Polarity	N-CH
Power Dissipation	150 W
Threshold Voltage	4 V
Input Capacitance	3247 pF
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	110A
Rise Time	101 ns
Input Capacitance (Ciss)	3247pF @25V(Vds)
Input Power (Max)	200 W
Fall Time	65 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	10.67 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Dynamic dv/dt rating
Fully avalanche rated
Fast switching
±20V Gate-source voltage

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