2N6109G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6109G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW7538696
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 50V 7A
Documentation

Datasheet

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2N6109G Specifications

Attribute	Attribute Value

Part Number	2N6109G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW7538696
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	10 MHz
Voltage Rating (DC)	-50.0 V
Current Rating	7.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	50 V
Thermal Resistance	3.125℃/W (RθJC)
Continuous Collector Current	7A
hFE Min	30 @2.5A, 4V
hFE Max	150
Input Power (Max)	40 W
DC Current Gain (hFE)	10
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	40 W
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Size-Length	10.28 mm
Size-Width	4.83 mm
Size-Height	15.75 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The 2N6109G is a 7A PNP complementary silicon Power Transistor designed for use in general-purpose amplifier and switching applications.
High DC current gain

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