2N6287G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6287G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW5564230
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-3 PNP 100V 20A
Documentation

Datasheet

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2N6287G Specifications

Attribute	Attribute Value

Part Number	2N6287G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW5564230
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Voltage Rating (DC)	-100 V
Current Rating	-20.0 A
Output Voltage	100 V
Output Current	20 A
Number of Positions	2 Position
Polarity	PNP, P-Channel
Power Dissipation	160 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	20A
hFE Min	750 @10A, 3V
hFE Max	18000
Input Power (Max)	160 W
DC Current Gain (hFE)	100
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	160000 mW
Input Voltage	5 V
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Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The 2N6287G is a -100V Silicon PNP Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low frequency switching applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
High DC current gain
Collector-emitter sustaining voltage(Vce (sus) = 100VDC minimum)
Collector-base voltage (Vcbo = 100V)
Emitter-base voltage (Vcbo = 5V)

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