2SB1182TLQ - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2SB1182TLQ
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW17837546
Category

BJT Transistor, BJT
Package

TO-252-3
Description

CPT PNP 32V 2A
Documentation

Datasheet

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2SB1182TLQ Specifications

Attribute	Attribute Value

Part Number	2SB1182TLQ
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW17837546
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	100 MHz
Voltage Rating (DC)	-32.0 V
Current Rating	-2.00 A
Power Rating	10 W
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	32 V
Continuous Collector Current	2A
hFE Min	120 @500mA, 3V
hFE Max	390
Input Power (Max)	10 W
DC Current Gain (hFE)	82
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	10000 mW
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Size-Length	6.5 mm
Size-Width	5.5 mm
Size-Height	2.3 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

PNP Silicon epitaxial planar transistor Medium power Transistor Features 1) Low VCE(sat). 2) Complements the 2SD1758

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