2SB1182TLQ ,BJT Transistor, BJT - ROHM Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
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163 points
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Part No2SB1182TLQ
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ManufacturerROHM Semiconductor
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ChipWorker Part#CW17837546
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CategoryBJT Transistor, BJT
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PackageTO-252-3
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DescriptionCPT PNP 32V 2A
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DocumentationDatasheet
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Ships fromMoscow
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Наличие100 pcs In Stock
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Estimated Price$ 0.12
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2SB1182TLQ Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | 2SB1182TLQ | |
| Manufacturer | ROHM Semiconductor | |
| ChipWorker Part# | CW17837546 | |
| Category | BJT Transistor, BJT | |
| Documentation | Datasheet | |
| Mounting Style | Surface Mount | |
| Number of Pins | 3 Pin | |
| Case/Package | TO-252-3 | |
| Frequency | 100 MHz | |
| Voltage Rating (DC) | -32.0 V | |
| Current Rating | -2.00 A | |
| Power Rating | 10 W | |
| Number of Positions | 3 Position | |
| Polarity | PNP, P-Channel | |
| Power Dissipation | 1 W | |
| Breakdown Voltage (Collector to Emitter) | 32 V | |
| Continuous Collector Current | 2A | |
| hFE Min | 120 @500mA, 3V | |
| hFE Max | 390 | |
| Input Power (Max) | 10 W | |
| DC Current Gain (hFE) | 82 | |
| Operating Temperature (Max) | 150 ℃ | |
| Operating Temperature (Min) | -55 ℃ | |
| Power Dissipation (Max) | 10000 mW | |
| expand all | ||
| Size-Length | 6.5 mm | |
| Size-Width | 5.5 mm | |
| Size-Height | 2.3 mm | |
| Operating Temperature | 150℃ (TJ) | |
| Product Lifecycle Status | Active | |
| Packaging | Tape & Reel (TR) | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free | |
| REACH SVHC Compliance | No SVHC | |
| REACH SVHC Compliance Edition | 2015/06/15 | |
| ECCN Code | EAR99 |
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