2STBN15D100 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2STBN15D100
Manufacturer

ST Microelectronics
ChipWorker Part#

CW21392238
Category

BJT Transistor, BJT
Package

TO-263-3
Description

D2PAK NPN 100V 12A
Documentation

Datasheet

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2STBN15D100 Specifications

Attribute	Attribute Value

Part Number	2STBN15D100
Manufacturer	ST Microelectronics
ChipWorker Part#	CW21392238
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	70 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	12A
hFE Min	750 @3A, 3V
Input Power (Max)	70 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	70000 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The 2STBN15D100 is a NPN low voltage power Darlington Transistor manufactured using Planar technology with "Base Island" layout. It is suitable for use with linear and switching industrial equipment.
Good hFE linearity
High fT frequency
Monolithic Darlington configuration with integrated anti-parallel collector-emitter diode

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