APT100GT60JR - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT100GT60JR
Manufacturer

Microsemi
ChipWorker Part#

CW82235696
Category

IGBT Transistor, IGBT Module
Package

SOT-227
Description

Trans IGBT Chip N-CH 600V 148A 500000mW 4Pin SOT-227
Documentation

Datasheet

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APT100GT60JR Specifications

Attribute	Attribute Value

Part Number	APT100GT60JR
Manufacturer	Microsemi
ChipWorker Part#	CW82235696
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227
Voltage Rating (DC)	600 V
Current Rating	148 A
Power Dissipation	500000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Input Capacitance (Cies)	5.15nF @25V
Input Power (Max)	500 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Don"t be afraid to step up the amps in your device when using this APT100GT60JR IGBT transistor from Microsemi. Its maximum power dissipation is 500000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single dual emitter configuration.

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