L6387ED - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

L6387ED
Manufacturer

ST Microelectronics
ChipWorker Part#

CW3874461
Category

FET Driver
Package

SOIC-8
Description

Driver; 400mA; 580V; 750mW; Channels:2; 400kHz; DIP8; Package: tube
Documentation

Datasheet

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L6387ED Specifications

Attribute	Attribute Value

Part Number	L6387ED
Manufacturer	ST Microelectronics
ChipWorker Part#	CW3874461
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Frequency	0.4 MHz
Supply Voltage (DC)	5.50V (min)
Rise/Fall Time	50ns, 30ns
Number of Outputs	2 Output
Number of Positions	8 Position
Power Dissipation	750 mW
Rise Time	50 ns
Output Current (Max)	0.65 A
Fall Time	30 ns
Fall Time (Max)	30 ns
Fall Time (Max)	50 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-45 ℃
Power Dissipation (Max)	750 mW
Supply Voltage (Max)	17 V
Supply Voltage (Min)	5.5 V
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Size-Length	4.9 mm
Size-Width	3.9 mm
Size-Height	1.25 mm
Operating Temperature	-45℃ ~ 125℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The L6387ED is a simple and compact high voltage Gate Driver manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOS or IGBT device. The high-side (floating) section is enabled to work with voltage rail up to 600V. Both device outputs can independently sink and source 650 and 400mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. The L6387E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The L6387E features the UVLO protection on the VCC supply voltage and integrates the bootstrap diode, allowing a more compact and reliable solution.
CMOS/TTL Schmitt-trigger inputs with hysteresis and pull-down
Internal bootstrap diode structure
Outputs in phase with inputs
Interlocking function
dV/dt immunity of ±50V/ns in full temperature range
50/30ns Rise/fall with 1nF load switching time

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