APT65GP60L2DQ2G - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT65GP60L2DQ2G
Manufacturer

Microsemi
ChipWorker Part#

CW113559916
Category

IGBT Transistor, IGBT Module
Package

TO-264-3
Description

Trans IGBT Chip N-CH 600V 198A 833000mW 3Pin(3+Tab) TO-264 MAX
Documentation

Datasheet

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APT65GP60L2DQ2G Specifications

Attribute	Attribute Value

Part Number	APT65GP60L2DQ2G
Manufacturer	Microsemi
ChipWorker Part#	CW113559916
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Voltage Rating (DC)	600 V
Current Rating	198 A
Power Dissipation	833000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	833 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	833000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

You can use this APT65GP60L2DQ2G IGBT transistor from Microsemi as an electronic switch. Its maximum power dissipation is 833000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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