AUIRLR2905 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AUIRLR2905
Manufacturer

Infineon
ChipWorker Part#

CW12829200
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 55V 42A
Documentation

Datasheet

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AUIRLR2905 Specifications

Attribute	Attribute Value

Part Number	AUIRLR2905
Manufacturer	Infineon
ChipWorker Part#	CW12829200
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	110 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.027 Ω
Polarity	N-CH
Power Dissipation	110 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	42A
Rise Time	84 ns
Input Capacitance (Ciss)	1700pF @25V(Vds)
Fall Time	15 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The AUIRLR2905 is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized design, provides an extremely efficient and reliable operation.
Advanced planar technology
Logic level gate drive
Low ON-resistance
Dynamic dV/dt rating
Fully avalanche rating
Repetitive avalanche allowed up to Tjmax

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