BC337G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC337G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW7080283
Category

BJT Transistor, BJT
Package

TO-92-3
Description

TO-92 NPN 45V 0.8A
Documentation

Datasheet

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BC337G Specifications

Attribute	Attribute Value

Part Number	BC337G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW7080283
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	210 MHz
Voltage Rating (DC)	45.0 V
Current Rating	800 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	625 mW
Gain Bandwidth Product	210 MHz
Breakdown Voltage (Collector to Emitter)	45 V
Continuous Collector Current	0.8A
hFE Min	100 @100mA, 1V
Input Power (Max)	625 mW
DC Current Gain (hFE)	630
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625 mW
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Size-Length	5.2 mm
Size-Width	4.19 mm
Size-Height	5.33 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The BC337G is a NPN silicon bipolar Amplifier Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for medium power applications.

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