BC373RL1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC373RL1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW141075037
Category

BJT Transistor, BJT
Package

TO-226-3
Description

TO-92 NPN 80V 1A
Documentation

Datasheet

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BC373RL1G Specifications

Attribute	Attribute Value

Part Number	BC373RL1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW141075037
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-226-3
Voltage Rating (DC)	80.0 V
Current Rating	1.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	625 mW
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	1A
hFE Min	10000 @100mA, 5V
Input Power (Max)	625 mW
DC Current Gain (hFE)	10
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	200 MHz
Power Dissipation (Max)	1500 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Bipolar (BJT) Transistor NPN - Darlington 80V 1A 200MHz 625mW Through Hole TO-92-3

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