BC556BG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC556BG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW37985052
Category

BJT Transistor, BJT
Package

TO-92-3
Description

TO-92 PNP 65V 0.1A
Documentation

Datasheet

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BC556BG Specifications

Attribute	Attribute Value

Part Number	BC556BG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW37985052
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	280 MHz
Voltage Rating (DC)	-65.0 V
Current Rating	-100 mA
Polarity	PNP
Power Dissipation	625 mW
Breakdown Voltage (Collector to Emitter)	65 V
Continuous Collector Current	0.1A
hFE Min	180 @2mA, 5V
Input Power (Max)	625 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625 mW
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Size-Length	5.2 mm
Size-Width	4.19 mm
Size-Height	5.33 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Box
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the PNP BC556BG general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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