BCX5616TA ,BJT Transistor, BJT - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

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124 points

Part No

BCX5616TA
Manufacturer

Diodes
ChipWorker Part#

CW4718450
Category

BJT Transistor, BJT
Package

SOT-89-3
Description

Trans GP BJT NPN 80V 1A 1000mW Automotive 4Pin(3+Tab) SOT-89 T/R
Documentation

Datasheet
Ships from

Moscow
Наличие

3 pcs In Stock
Estimated Price

$ 0.05

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BCX5616TA Specifications

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Attribute	Attribute Value

Part Number	BCX5616TA
Manufacturer	Diodes
ChipWorker Part#	CW4718450
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-89-3
Voltage Rating (DC)	80.0 V
Current Rating	1.00 A
Power Rating	1 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	1A
hFE Min	100 @150mA, 2V
hFE Max	25 @5mA, 2V
Input Power (Max)	1 W
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
	expand all
Size-Length	4.6 mm
Size-Width	2.6 mm
Size-Height	1.6 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

The BCX5616TA is a NPN silicon planar medium power Bipolar Transistor offers 100V collector-base voltage and 1A continuous collector current.
-65 to 150°C Operating temperature range

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- Please check the technical specifications of the products when ordering.
- MOQ is the minimum order quantity required to purchase each part.
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