BD243C - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD243C
Manufacturer

ST Microelectronics
ChipWorker Part#

CW42288014
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans GP BJT NPN 100V 6A 65000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

BD243C Global Supplier

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BD243C Specifications

Attribute	Attribute Value

Part Number	BD243C
Manufacturer	ST Microelectronics
ChipWorker Part#	CW42288014
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	3 MHz
Voltage Rating (DC)	100 V
Current Rating	6.00 A
Power Rating	65 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	65 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	15 @3A, 4V
Input Power (Max)	65 W
DC Current Gain (hFE)	30
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	65000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Features
■ STmicroelectronics PREFERRED SALESTYPES
Applications
■ SWITCHING APPLICATIONS
■ LINEAR APPLICATIONS
Description
The BD243C device is a silicon Epitaxial-Base NPN transistor mounted in Jedec TO-220 plastic
package. It’s intend for use in medium power linear and switching applications. The complementary PNP type is BD244C.

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