BDW47G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDW47G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4036084
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 100V 15A
Documentation

Datasheet

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BDW47G Specifications

Attribute	Attribute Value

Part Number	BDW47G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4036084
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-100 V
Current Rating	-15.0 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	85 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	15A
hFE Min	1000 @5A, 4V
Input Power (Max)	85 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	4MHz (Min)
Power Dissipation (Max)	85000 mW
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Size-Length	10.53 mm
Size-Width	4.83 mm
Size-Height	15.75 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BDW47G is a 15A NPN-PNP medium-power Darlington Transistor designed for general purpose and low speed switching applications.
Complementary device
Monolithic construction with built-in base emitter shunt resistors

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