BDX53BG ,BJT Transistor, BJT - ON Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
Popularity Score
111 points
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Part NoBDX53BG
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ManufacturerON Semiconductor
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ChipWorker Part#CW26388604
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CategoryBJT Transistor, BJT
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PackageTO-220-3
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DescriptionTO-220AB NPN 80V 8A
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DocumentationDatasheet
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Ships fromMoscow
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Наличие253 pcs In Stock
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Estimated Price$ 0.68
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BDX53BG Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | BDX53BG | |
| Manufacturer | ON Semiconductor | |
| ChipWorker Part# | CW26388604 | |
| Category | BJT Transistor, BJT | |
| Documentation | Datasheet | |
| Mounting Style | Through Hole | |
| Number of Pins | 3 Pin | |
| Case/Package | TO-220-3 | |
| Voltage Rating (DC) | 80.0 V | |
| Current Rating | 8.00 A | |
| Number of Circuits | 8 Circuit | |
| Number of Positions | 3 Position | |
| Polarity | NPN | |
| Power Dissipation | 65 W | |
| Breakdown Voltage (Collector to Emitter) | 80 V | |
| Continuous Collector Current | 8A | |
| hFE Min | 750 @3A, 3V | |
| Input Power (Max) | 65 W | |
| DC Current Gain (hFE) | 750 | |
| Operating Temperature (Max) | 150 ℃ | |
| Operating Temperature (Min) | -65 ℃ | |
| Power Dissipation (Max) | 65000 mW | |
| expand all | ||
| Size-Length | 10.53 mm | |
| Size-Width | 4.83 mm | |
| Size-Height | 15.75 mm | |
| Operating Temperature | -65℃ ~ 150℃ (TJ) | |
| Product Lifecycle Status | Active | |
| Packaging | Tube | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free | |
| ECCN Code | EAR99 |
Similar & Replacement Parts
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Product Description
- The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
- Features
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- High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
- Collector Emitter Sustaining Voltage @ 100 mAdc
- VCEO(sus) = 80 Vdc (Min) BDX53B, 54B
- VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
- Low Collector-Emitter Saturation Voltage
- VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
- VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- TO-220AB Compact Package
- Pb-Free Packages are Available
Delivery
Ordering Information
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