BDX53BG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDX53BG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW26388604
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 80V 8A
Documentation

Datasheet

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BDX53BG Specifications

Attribute	Attribute Value

Part Number	BDX53BG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW26388604
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	80.0 V
Current Rating	8.00 A
Number of Circuits	8 Circuit
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	65 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	8A
hFE Min	750 @3A, 3V
Input Power (Max)	65 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	65000 mW
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Size-Length	10.53 mm
Size-Width	4.83 mm
Size-Height	15.75 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
Features
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High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Pb-Free Packages are Available

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