BFP650 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BFP650
Manufacturer

Infineon
ChipWorker Part#

CW131266096
Category

BJT Transistor, BJT
Package

SOT-343-4
Description

Digital Transistors \\- NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
Documentation

Datasheet

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BFP650 Specifications

Attribute	Attribute Value

Part Number	BFP650
Manufacturer	Infineon
ChipWorker Part#	CW131266096
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-343-4
Power Rating	0.5 W
Breakdown Voltage (Collector to Emitter)	4.5 V
Gain	10.5dB ~ 21.5dB
hFE Min	110 @80mA, 3V
Input Power (Max)	500 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
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Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	0.9 mm
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Summary of Features:
Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz
Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system
Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system
Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz
Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz
Based on Infineon´s reliable, high volume SiGe:C wafer technology
Easy to use Pb-free (RoHS compliant) standard package with visible leads
Qualification report according to AEC-Q101 available

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