BGS12PL6E6327XTSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BGS12PL6E6327XTSA1
Manufacturer

Infineon
ChipWorker Part#

CW14162631
Category

RF Module
Package

TSLP-6-4
Description

INFINEON BGS12PL6E6327XTSA1 RF Switch IC, SPDT, 100MHz to 4GHz, TTL, CMOS, 2.4V to 3.6V, DFN-6
Documentation

Datasheet

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BGS12PL6E6327XTSA1 Specifications

Attribute	Attribute Value

Part Number	BGS12PL6E6327XTSA1
Manufacturer	Infineon
ChipWorker Part#	CW14162631
Category	RF Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSLP-6-4
Frequency	4000 MHz
Supply Voltage (DC)	2.40V (min)
Supply Current	0.2 mA
Number of Positions	6 Position
Test Frequency	3.8 GHz
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.4V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.4 V
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Size-Height	0.27 mm
Operating Temperature	-30℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

The BGS 12PL6 E6327 is a general purpose RF CMOS Power SPDT Switch is designed to cover a broad range of high power applications from 30MHz to 4GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The symmetric design of its single pole double throw configuration offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1dB compression point exceeds the switch"s maximum input power level of 35dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.36dB in the 1GHz, 0.46dB in the 2GHz and 0.6dB in the 3GHz range. The BGS12PL6 RF switch is manufactured in Infineon"s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.
2 high-linearity TRx paths with power handling capability of up to 35dBm
All ports fully symmetrical
Low insertion loss
Low harmonic generation
High port-to-port isolation
0.1 to 4GHz coverage
High ESD robustness
On-chip control logic
No decoupling capacitors required if no DC applied on RF lines

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