BSZ110N06NS3GATMA1 ,MOSFET, MOSFET Transistor - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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73 points

Part No

BSZ110N06NS3GATMA1
Manufacturer

Infineon
ChipWorker Part#

CW26210908
Category

MOSFET, MOSFET Transistor
Package

PG-TSDSON
Description

TSDSON N-CH 60V 20A
Documentation

Datasheet
Ships from

Moscow
Наличие

6546 pcs In Stock
Estimated Price

$ 0.26

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BSZ110N06NS3GATMA1 Specifications

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Attribute	Attribute Value

Part Number	BSZ110N06NS3GATMA1
Manufacturer	Infineon
ChipWorker Part#	CW26210908
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TSDSON
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.009 Ω
Polarity	N-Channel
Power Dissipation	50 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	20A
Rise Time	77 ns
Input Capacitance (Ciss)	2000pF @30V(Vds)
Fall Time	6 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2100 mW
	expand all
Size-Length	3.4 mm
Size-Width	3.4 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

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Product Description

The BSZ110N06NS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
Highest system efficiency
Less paralleling required
Increased power density
Very low voltage overshoot

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