BSZ900N20NS3GATMA1 ,MOSFET, MOSFET Transistor - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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Part No

BSZ900N20NS3GATMA1
Manufacturer

Infineon
ChipWorker Part#

CW11021226
Category

MOSFET, MOSFET Transistor
Package

PG-TSDSON
Description

TSDSON N-CH 200V 15.2A
Documentation

Datasheet
Ships from

Moscow
Наличие

3495 pcs In Stock
Estimated Price

$ 0.8

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BSZ900N20NS3GATMA1 Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	BSZ900N20NS3GATMA1
Manufacturer	Infineon
ChipWorker Part#	CW11021226
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TSDSON
Power Rating	62.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.077 Ω
Polarity	N-Channel
Power Dissipation	62.5 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	15.2A
Rise Time	4 ns
Input Capacitance (Ciss)	690pF @100V(Vds)
Fall Time	3 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	62.5 W
	expand all
Size-Length	3.4 mm
Size-Width	3.4 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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Product Description

The BSZ900N20NS3 G is a N-channel Power MOSFET with performance leading OptiMOS™ benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.
Industry"s lowest RDS (ON)
Lowest Qg and Qgd
World"s lowest FOM and MSL 1 rated
Highest efficiency
Highest power density
Minimal device paralleling required
Environmentally friendly
Easy-to-design-in products
Qualified according to JEDEC for target application
Halogen-free, Green device

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