BUL1102EFP - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BUL1102EFP
Manufacturer

ST Microelectronics
ChipWorker Part#

CW34840069
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220FP NPN 450V 4A
Documentation

Datasheet

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BUL1102EFP Specifications

Attribute	Attribute Value

Part Number	BUL1102EFP
Manufacturer	ST Microelectronics
ChipWorker Part#	CW34840069
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	30 W
Breakdown Voltage (Collector to Emitter)	450 V
Continuous Collector Current	4A
hFE Min	12 @2A, 5V
Input Power (Max)	30 W
DC Current Gain (hFE)	20
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	70000 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BUL1102EFP is a NPN fast-switching Power Transistor manufactured in Multi Epitaxial Planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. It has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
High voltage capability
Very high switching speed

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