FDC6303N - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDC6303N
Manufacturer

Fairchild
ChipWorker Part#

CW11623440
Category

MOSFET, MOSFET Transistor
Package

TSOT-23-6
Description

FAIRCHILD SEMICONDUCTOR FDC6303N Dual MOSFET, Dual N Channel, 680mA, 25V, 450mohm, 4.5V, 800mV
Documentation

Datasheet

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FDC6303N Specifications

Attribute	Attribute Value

Part Number	FDC6303N
Manufacturer	Fairchild
ChipWorker Part#	CW11623440
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Voltage Rating (DC)	25.0 V
Current Rating	680 mA
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	450 mΩ
Polarity	N-Channel, Dual N-Channel
Power Dissipation	900 mW
Threshold Voltage	800 mV
Input Capacitance	50.0 pF
Gate Charge	1.64 nC
Drain to Source Voltage (Vds)	25 V
Breakdown Voltage (Drain to Source)	25.0 V
Breakdown Voltage (Gate to Source)	8.00 V
Continuous Drain Current (Ids)	680 mA
Rise Time	8.5 ns
Input Capacitance (Ciss)	50pF @10V(Vds)
Input Power (Max)	700 mW
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	0.9 W
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Size-Length	3 mm
Size-Width	1.7 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
Very low level gate drive requirements allowing direct operation in 3V circuits
Gate-source Zener for ESD ruggedness
Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
8V Gate-source voltage
0.68A Continuous drain/output current
2A Pulsed drain/output current

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