FDC637AN - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDC637AN
Manufacturer

Fairchild
ChipWorker Part#

CW6190196
Category

MOSFET, MOSFET Transistor
Package

TSOT-23-6
Description

FAIRCHILD SEMICONDUCTOR FDC637AN MOSFET Transistor, N Channel, 6.2A, 20V, 24mohm, 4.5V, 820mV
Documentation

Datasheet

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FDC637AN Specifications

Attribute	Attribute Value

Part Number	FDC637AN
Manufacturer	Fairchild
ChipWorker Part#	CW6190196
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Voltage Rating (DC)	20.0 V
Current Rating	6.20 A
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.024 Ω
Polarity	N-Channel
Power Dissipation	1.6 W
Threshold Voltage	820 mV
Input Capacitance	1.12 nF
Gate Charge	10.5 nC
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	6.20 A
Rise Time	13 ns
Input Capacitance (Ciss)	1125pF @10V(Vds)
Input Power (Max)	800 mW
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.6W (Ta)
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Size-Length	3 mm
Size-Width	1.7 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDC637AN is a 2.5V specified single N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. It is suitable for use in DC-to-DC converter, load switching and battery protection applications.
Fast switching speed
High performance Trench technology for extremely low RDS (ON)
10.5nC Typical low gate charge

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