FDD6680AS - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDD6680AS
Manufacturer

Fairchild
ChipWorker Part#

CW71524687
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 30V 55A 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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FDD6680AS Specifications

Attribute	Attribute Value

Part Number	FDD6680AS
Manufacturer	Fairchild
ChipWorker Part#	CW71524687
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	30.0 V
Current Rating	55.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0105 Ω
Polarity	N-Channel
Power Dissipation	60 mW
Threshold Voltage	1.4 V
Input Capacitance	1.20 nF
Gate Charge	21.0 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	55.0 A
Rise Time	6 ns
Input Capacitance (Ciss)	1200pF @15V(Vds)
Input Power (Max)	1.3 W
Fall Time	12 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60W (Ta)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDD6680AS is a SyncFET™ N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed to replace a single MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. It includes an integrated Schottky diode using Fairchild"s monolithic SyncFET technology. The performance is as the low-side switch in a synchronous rectifier is indistinguishable from the performance in parallel with a Schottky diode.
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability
21nC Typical low gate charge

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